Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm
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Abstract
Quantum dots (QDs) formed on GaAs(100) substrates by InAs deposition followed by (Al,Ga)As or (In,Ga,Al)As overgrowth demonstrate a photoluminescence (PL) peak that is redshifted (up to 1.3 μm) compared to PL emission of GaAs-covered QDs. The result is attributed to redistribution of InAs molecules in the system in favor of the QDs, stimulated by Al atoms in the cap layer. The deposition of a 1 nm thick AlAs cover layer on top of the InAs-GaAs QDs results in replacement of InAs molecules of the wetting layer by AlAs molecules, leading to a significant increase in the heights of the InAs QDs, as follows from transmission electron microscopy. This effect is directly confirmed by transmission electron microscopy indicating a transition to a Volmer-Weber-like QD arrangement. We demonstrate an injection laser based on this kind of QDs. © 2000 American Institute of Physics.
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Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Zhukov, A E" uniqKey="Zhukov A">A. E. Zhukov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Shernyakov, Yu M" uniqKey="Shernyakov Y">Yu. M. Shernyakov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Musikhin, Yu G" uniqKey="Musikhin Y">Yu. G. Musikhin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Ustinov, V M" uniqKey="Ustinov V">V. M. Ustinov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Bert, N A" uniqKey="Bert N">N. A. Bert</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Kopev, P S" uniqKey="Kopev P">P. S. Kopev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Alferov, Zh I" uniqKey="Alferov Z">Zh. I. Alferov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Mintairov, A M" uniqKey="Mintairov A">A. M. Mintairov</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Electrical Engineering Department, University of Notre Dame, Notre Dame, Indiana 46556</s1><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>Electrical Engineering Department, University of Notre Dame, Notre Dame</wicri:cityArea></affiliation></author><author><name sortKey="Merz, J L" uniqKey="Merz J">J. L. Merz</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Electrical Engineering Department, University of Notre Dame, Notre Dame, Indiana 46556</s1><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>Electrical Engineering Department, University of Notre Dame, Notre Dame</wicri:cityArea></affiliation></author><author><name sortKey="Ledentsov, N N" uniqKey="Ledentsov N">N. N. Ledentsov</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Institut fur Festkorperphysik Technische Universitat Berlin, 10623 Berlin, Germany</s1><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut fur Festkorperphysik Technische Universitat Berlin, 10623 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Bimberg, D" uniqKey="Bimberg D">D. Bimberg</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Institut fur Festkorperphysik Technische Universitat Berlin, 10623 Berlin, Germany</s1><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut fur Festkorperphysik Technische Universitat Berlin, 10623 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0505422</idno><date when="2000-12-01">2000-12-01</date><idno type="stanalyst">PASCAL 00-0505422 AIP</idno><idno type="RBID">Pascal:00-0505422</idno><idno type="wicri:Area/Main/Corpus">012247</idno><idno type="wicri:Area/Main/Repository">011A11</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Photoluminescence</term><term>Quantum well lasers</term><term>Red shift</term><term>Semiconductor quantum dots</term><term>TEM</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>7855C</term><term>7866F</term><term>Etude expérimentale</term><term>Point quantique semiconducteur</term><term>Laser puits quantique</term><term>Semiconducteur III-V</term><term>Indium composé</term><term>Aluminium composé</term><term>Gallium arséniure</term><term>Photoluminescence</term><term>Déplacement vers le rouge</term><term>TEM</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Quantum dots (QDs) formed on GaAs(100) substrates by InAs deposition followed by (Al,Ga)As or (In,Ga,Al)As overgrowth demonstrate a photoluminescence (PL) peak that is redshifted (up to 1.3 μm) compared to PL emission of GaAs-covered QDs. The result is attributed to redistribution of InAs molecules in the system in favor of the QDs, stimulated by Al atoms in the cap layer. The deposition of a 1 nm thick AlAs cover layer on top of the InAs-GaAs QDs results in replacement of InAs molecules of the wetting layer by AlAs molecules, leading to a significant increase in the heights of the InAs QDs, as follows from transmission electron microscopy. This effect is directly confirmed by transmission electron microscopy indicating a transition to a Volmer-Weber-like QD arrangement. We demonstrate an injection laser based on this kind of QDs. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>88</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm</s1></fA08><fA11 i1="01" i2="1"><s1>TSATSULNIKOV (A. F.)</s1></fA11><fA11 i1="02" i2="1"><s1>KOVSH (A. R.)</s1></fA11><fA11 i1="03" i2="1"><s1>ZHUKOV (A. E.)</s1></fA11><fA11 i1="04" i2="1"><s1>SHERNYAKOV (Yu. M.)</s1></fA11><fA11 i1="05" i2="1"><s1>MUSIKHIN (Yu. G.)</s1></fA11><fA11 i1="06" i2="1"><s1>USTINOV (V. M.)</s1></fA11><fA11 i1="07" i2="1"><s1>BERT (N. A.)</s1></fA11><fA11 i1="08" i2="1"><s1>KOPEV (P. S.)</s1></fA11><fA11 i1="09" i2="1"><s1>ALFEROV (Zh. I.)</s1></fA11><fA11 i1="10" i2="1"><s1>MINTAIROV (A. M.)</s1></fA11><fA11 i1="11" i2="1"><s1>MERZ (J. L.)</s1></fA11><fA11 i1="12" i2="1"><s1>LEDENTSOV (N. N.)</s1></fA11><fA11 i1="13" i2="1"><s1>BIMBERG (D.)</s1></fA11><fA14 i1="01"><s1>A. F. Ioffe Physico-Technical Institute of the RAS, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Electrical Engineering Department, University of Notre Dame, Notre Dame, Indiana 46556</s1><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA14 i1="03"><s1>Institut fur Festkorperphysik Technische Universitat Berlin, 10623 Berlin, Germany</s1><sZ>12 aut.</sZ><sZ>13 aut.</sZ></fA14><fA20><s1>6272-6275</s1></fA20><fA21><s1>2000-12-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0505422</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Quantum dots (QDs) formed on GaAs(100) substrates by InAs deposition followed by (Al,Ga)As or (In,Ga,Al)As overgrowth demonstrate a photoluminescence (PL) peak that is redshifted (up to 1.3 μm) compared to PL emission of GaAs-covered QDs. The result is attributed to redistribution of InAs molecules in the system in favor of the QDs, stimulated by Al atoms in the cap layer. The deposition of a 1 nm thick AlAs cover layer on top of the InAs-GaAs QDs results in replacement of InAs molecules of the wetting layer by AlAs molecules, leading to a significant increase in the heights of the InAs QDs, as follows from transmission electron microscopy. This effect is directly confirmed by transmission electron microscopy indicating a transition to a Volmer-Weber-like QD arrangement. 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